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| Transys Electronics LIMITED TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VBE 1 2 3 unless otherwise specified) Test conditions MIN 600 400 7 100 200 100 10 5 0.5 1.2 1.1 V V V 40 TYP MAX UNIT V V V A A A Ic= 100A , IE=0 IC= 1 mA , IB=0 IE= 100 A, IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , IC=0 VCE= 20 V, IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 mA IC= 50 mA, IB= 10mA IE= 100 mA, VCE= 20 V, IC=20mA Transition frequency fT f = 1MHz IC=50mA, IB1=-IB2=5mA, 8 MHz Fall time Storage time tf tS 0.3 1.5 s s VCC=45V CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 |
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